LinkedIn Facebook twitter home page
New Book AlertsSign Up

Advanced Search

Change Location

Artech House UK
MMIC Design: GaAs FETs and HEMTs

MMIC Design: GaAs FETs and HEMTs

By (author): Peter H. Ladbrooke
Copyright: 1989
Pages: 394
ISBN: 9780890063149

Artech House is pleased to offer you this title in a special In-Print-Forever® ( IPF® ) hardbound edition. This book is not available from inventory but can be printed at your request and delivered within 2-4 weeks of receipt of order. Please note that because IPF® books are printed on demand, returns cannot be accepted.

Print Book £111.00 Qty:
Previously unpublished techniques show you how to predict the microwave behavior of a complete MMIC from knowledge of its material and structural make-up. A distillation of over 30 years' research, MMIC Design: GaAs FETs and HEMTs uses original expressions to design, analyze, and diagnose small-signal amplifies MMICs. Compact and numerically efficient routines calculate the microwave equivalent circuit elements and scattering parameters of GaAs FETs and HEMTs. This unique approach to MMIC design eliminates the need to perform time-consuming and costly experiments at microwave frequencies. The major objective of this book is to develop equations, compact enough to allow entire analysis and design program packages to run on a reaonsbly powerful personal computer. Using device physics solutions to create ths compact, rapidly executable code, the author takes analysis to the technological, rather than just the circuit, level. You learn how to design FETs concurrently with the passive network to reach the best possible compromise between performance and yield.
Introduction. MMIC Types and Chip Functions. Overview of Passive Elements. PIN and Schottky Diodes. Elementary FET Principles. MESFETs. High Electron Mobility Transistors. Reverse Modelling GaAs MESFETs and HEMTs. Design Limits. FETs in Amplifiers. Computer Aided Design. Future Developments.
  • Peter H. Ladbrooke

    has spent a professional lifetime on the physics and application of compound semiconductor FETs, following work on non-uniformities in Gunn and Schottky devices for which he was awarded a Ph.D. by Cambridge University.

© 2024 Artech House